PDN0954S mosfets equivalent, n-channel mosfets.
* 100V,1.4A , RDS(ON)=350mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
Applications
* Networking
* Load Switch.
SOT23S Pin Configuration
D
D
S G
G
S
BVDSS 100V
RDSON 350m
ID 1.4A
Features
* 100V,1.4A , RDS(ON)=350mΩ@V.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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